Electrical and Chemical Characteristics of Ta2O5 Gate Dielectrics on Ge-rich SiGe Heterolayers

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DC Field	Value	Language
dc.contributor.author	Das, R
dc.contributor.author	Saha, S
dc.date.accessioned	2016-12-22T17:26:40Z	-
dc.date.available	2016-12-22T17:26:40Z	-
dc.date.issued	2012
dc.identifier.issn	0972-8791 (Print)
dc.identifier.uri	http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/853	-
dc.description	177-184	en_US
dc.description.abstract	The charge trapping/detrapping behavior in ultra-thin tantalum pentoxide oxide (Ta2O5, equivalent oxide thickness ~1.76 nm) is presented under constant current stressing (CCS, 0.255 to 1.02 C. cm−2). The Ta2O5 film have been deposited on Ge-rich SiGe (Ge~85%) heterolayers using tantalum pentaethoxide [Ta(OC2H5)5] as an organometallic source at low temperature (~150 °C) by plasma enhanced chemical vapor deposition (PECVD) technique. The surface chemical states of Ta2O5 film has been analyzed by X-ray photo electron spectroscopy (XPS). Fixed oxide charge density (Qf/q) have been studied in constant current stressing.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Vidyasagar University , Midnapore , West-Bengal , India	en_US
dc.relation.ispartofseries	Journal of Physical Science;Vol 16 [2012]
dc.subject	Constant Current Stressing	en_US
dc.subject	Ge-rich SiGe	en_US
dc.subject	High-k dielectrics (Ta2O5) and XPS	en_US
dc.title	Electrical and Chemical Characteristics of Ta2O5 Gate Dielectrics on Ge-rich SiGe Heterolayers	en_US
dc.type	Article	en_US
Appears in Collections:	Journal of Physical Sciences Vol.16 [2012]

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