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Title: Electrical and Chemical Characteristics of Ta2O5 Gate Dielectrics on Ge-rich SiGe Heterolayers
Authors: Das, R
Saha, S
Keywords: Constant Current Stressing
Ge-rich SiGe
High-k dielectrics (Ta2O5) and XPS
Issue Date: 2012
Publisher: Vidyasagar University , Midnapore , West-Bengal , India
Series/Report no.: Journal of Physical Science;Vol 16 [2012]
Abstract: The charge trapping/detrapping behavior in ultra-thin tantalum pentoxide oxide (Ta2O5, equivalent oxide thickness ~1.76 nm) is presented under constant current stressing (CCS, 0.255 to 1.02 C. cm−2). The Ta2O5 film have been deposited on Ge-rich SiGe (Ge~85%) heterolayers using tantalum pentaethoxide [Ta(OC2H5)5] as an organometallic source at low temperature (~150 °C) by plasma enhanced chemical vapor deposition (PECVD) technique. The surface chemical states of Ta2O5 film has been analyzed by X-ray photo electron spectroscopy (XPS). Fixed oxide charge density (Qf/q) have been studied in constant current stressing.
Description: 177-184
ISSN: 0972-8791 (Print)
Appears in Collections:Journal of Physical Sciences Vol.16 [2012]

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