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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mitra, Partha | |
dc.date.accessioned | 2016-12-22T17:20:37Z | - |
dc.date.available | 2016-12-22T17:20:37Z | - |
dc.date.issued | 2010 | |
dc.identifier.issn | 0972-8791 (Print) | |
dc.identifier.uri | http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/811 | - |
dc.description | 235-240 | en_US |
dc.description.abstract | Polycrystalline copper oxide thin film was synthesized using Successive ionic layer adsorption and reaction (SILAR) technique. Fixed concentration of anionic precursor (1.0 M KOH ) and varying concentration of cationic precursor (copper sulphate complex) was used. For lower concentrations of copper sulphate complex, mixed phase of CuOand 2 Cu Owas found. Phase pure 2 Cu O was observed with enhanced concentration of copper sulphate complex. SEM micrograph shows formation of nanocrystalline grains on the surface. The bandgap energy was ~2.10 eV. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Vidyasagar University , Midnapore , West-Bengal , India | en_US |
dc.relation.ispartofseries | Journal of Physical Science;Vol 14 [2010] | |
dc.subject | Copper oxide | en_US |
dc.subject | polycrystalline thin film | en_US |
dc.subject | SILAR | en_US |
dc.title | Preparation of Copper Oxide thin Films by SILAR and their Characterization | en_US |
dc.type | Article | en_US |
Appears in Collections: | Journal of Physical Sciences Vol.14 [2010] |
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