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  4. Journal of Physical Sciences Vol.14 [2010]
Please use this identifier to cite or link to this item: http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/811
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dc.contributor.authorMitra, Partha
dc.date.accessioned2016-12-22T17:20:37Z-
dc.date.available2016-12-22T17:20:37Z-
dc.date.issued2010
dc.identifier.issn0972-8791 (Print)
dc.identifier.urihttp://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/811-
dc.description235-240en_US
dc.description.abstractPolycrystalline copper oxide thin film was synthesized using Successive ionic layer adsorption and reaction (SILAR) technique. Fixed concentration of anionic precursor (1.0 M KOH ) and varying concentration of cationic precursor (copper sulphate complex) was used. For lower concentrations of copper sulphate complex, mixed phase of CuOand 2 Cu Owas found. Phase pure 2 Cu O was observed with enhanced concentration of copper sulphate complex. SEM micrograph shows formation of nanocrystalline grains on the surface. The bandgap energy was ~2.10 eV.en_US
dc.language.isoen_USen_US
dc.publisherVidyasagar University , Midnapore , West-Bengal , Indiaen_US
dc.relation.ispartofseriesJournal of Physical Science;Vol 14 [2010]
dc.subjectCopper oxideen_US
dc.subjectpolycrystalline thin filmen_US
dc.subjectSILARen_US
dc.titlePreparation of Copper Oxide thin Films by SILAR and their Characterizationen_US
dc.typeArticleen_US
Appears in Collections:Journal of Physical Sciences Vol.14 [2010]

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