Preparation of Copper Oxide thin Films by SILAR and their Characterization

Abstract

Polycrystalline copper oxide thin film was synthesized using Successive ionic layer adsorption and reaction (SILAR) technique. Fixed concentration of anionic precursor (1.0 M KOH ) and varying concentration of cationic precursor (copper sulphate complex) was used. For lower concentrations of copper sulphate complex, mixed phase of CuOand 2 Cu Owas found. Phase pure 2 Cu O was observed with enhanced concentration of copper sulphate complex. SEM micrograph shows formation of nanocrystalline grains on the surface. The bandgap energy was ~2.10 eV.