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dc.contributor.authorBhattacharya, S.P
dc.contributor.authorSinha, S
dc.identifier.issn0972-8791 (Print)
dc.description.abstractTheoretical investigations of non-relativistic mechanism is explored for the determination of transmission coefficient across a multibarrier GaAs-AlyGa1-yAs heterostructure for the entire energy range of ε 〈 V0 , 0 ε = V and 0 ε 〉 V . The resonant tunneling states are also determined. The effect of number of barriers and number of cells in the well and barrier regions on the resonant energies are studied in detail. We have computed resonant tunneling lifetime, group-velocity and traversal time of electrons tunneled through the multibarrier system. The results obtained reveal that the electrons in the higher bands corresponding to resonant energies could tunnel out faster than those electrons in the lower band. Furthermore, the presence of an additional resonant peak in resonant energy spectrum indicated the presence of a new surface state in the multibarrier system.en_US
dc.publisherVidyasagar University , Midnapore , West-Bengal , Indiaen_US
dc.relation.ispartofseriesJournal of Physical Science;Vol 12 [2008]
dc.subjectMultibarrier resonant tunnelingen_US
dc.subjectTransmission Coefficienten_US
dc.subjectTunneling Lifetimeen_US
dc.subjectGroup velocityen_US
dc.subjectTraversal Timeen_US
dc.titleNon-Relativistic Formalism of Resonant Tunneling in the Semiconductor Superlatticesen_US
Appears in Collections:Journal of Physical Sciences Vol.12 [2008]

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