Please use this identifier to cite or link to this item: http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/729
Title: Resonant Tunneling in Multibarrier Semiconductor Heterostructure in Relativistic Framework
Authors: Sinha, Santanu
Bhattacharjee, S.P
Mahapatra, P. K.
Keywords: Multibarrier resonant tunneling
transmission coefficient
surface state
Issue Date: 2007
Publisher: Vidyasagar University , Midnapore , West-Bengal , India
Series/Report no.: Journal of Physical Science;Vol 11 [2007]
Abstract: A mathematical model based on relativistic approach is proposed for the determination of transmission coefficient within the energy range of ε <V0 , ε = V0 and ε >V0 for a multibarrier GaAs/Al y Ga1− y As heterostructure. The effect of number of barriers and number of cells in the well and barrier regions on the resonant energies are studied in detail. An additional resonant peak in resonant energy spectrum indicated the presence of a new surface state.
Description: 99-112
URI: http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/729
ISSN: 0972-8791 (Print)
Appears in Collections:Journal of Physical Sciences Vol.11 [2007]

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