Resonant Tunneling in Multibarrier Semiconductor Heterostructure in Relativistic Framework

Please use this identifier to cite or link to this item: http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/729

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DC Field	Value	Language
dc.contributor.author	Sinha, Santanu
dc.contributor.author	Bhattacharjee, S.P
dc.contributor.author	Mahapatra, P. K.
dc.date.accessioned	2016-12-22T17:05:16Z	-
dc.date.available	2016-12-22T17:05:16Z	-
dc.date.issued	2007
dc.identifier.issn	0972-8791 (Print)
dc.identifier.uri	http://inet.vidyasagar.ac.in:8080/jspui/handle/123456789/729	-
dc.description	99-112	en_US
dc.description.abstract	A mathematical model based on relativistic approach is proposed for the determination of transmission coefficient within the energy range of ε <V0 , ε = V0 and ε >V0 for a multibarrier GaAs/Al y Ga1− y As heterostructure. The effect of number of barriers and number of cells in the well and barrier regions on the resonant energies are studied in detail. An additional resonant peak in resonant energy spectrum indicated the presence of a new surface state.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Vidyasagar University , Midnapore , West-Bengal , India	en_US
dc.relation.ispartofseries	Journal of Physical Science;Vol 11 [2007]
dc.subject	Multibarrier resonant tunneling	en_US
dc.subject	transmission coefficient	en_US
dc.subject	surface state	en_US
dc.title	Resonant Tunneling in Multibarrier Semiconductor Heterostructure in Relativistic Framework	en_US
dc.type	Article	en_US
Appears in Collections:	Journal of Physical Sciences Vol.11 [2007]

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